Majority Carrier-A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area. 多数载流子-一种载流子,在半导体材料中起支配作用的空穴或电子,例如在N型中是电子。
Study of a new La~ ( 3+) ion selective electrode based on N, N ′-bis ( salicylidene)-thiocarbohydrazide schiff base as a neutral carrier 以双水杨醛缩硫代二氨基硫脲Schiff碱为中性载体的新型镧离子电极的研究
The improved iG technique can be used to obtain an increment of generation lifetime of minority carrier in MOS structure and a reduction of reverse current in P+ N junction. 采用改进的本征吸除工艺后,可增加硅片表面MOS结构少子产生寿命和降低P+N结二极管的反向电流。
Influence of c/ n ratio on nitrogen removal in suspended carrier biological reactor 碳氮比对悬浮填料生物反应器氮去除效果的影响
Rational selection and usage of carrier to noise ratio in CATV headend is discussed in this paper so as to ensure cost effectiveness and reliability of the trunk transmission system and improve the efficiency in distribution network. 文章讨论了CATV系统前端载噪比(C/N)H指标的合理选取及合理利用。从而保证干线传输系统的性价比、可靠性和有效提高分配网络的效率。
The descending air branch of the direct circulation to the north of 30 ° N is the main carrier of the dry cold air. 中低层30°N以北的正环流的下沉支是干冷空气的输送载体;
A three-segment laser is made to change the carrier distribution and spontaneous emission is observed from n-side window. 实验中制作了一个三段激光器来改变载流子的轴向分布,并从n面开窗口以观察自发辐射。
In this paper, according to the continuity of carrier profile, a method of calculating the carrier profile of a semiconductor n& n junction has been obtained, by solving the Poisson equation self-consistently. 根据载流子分布的连续性,由泊松方程自洽求解,得出了半导体n~--n结势垒分布的计算方法。
China Petroleum& Chemical Corporation: "1+ N" Project Build the Aircraft Carrier of National Lube 中石化1+N工程打造民族润滑油航母
The short minority carrier diffusion lengths of the ⅲ-ⅴ compounds ( n-GaAs, Gap and InP) of different doped levels are measured by the surface photovoltagc ( SPV) method. 本文用表面光伏(SPV)法测定了不同掺杂的Ⅲ-Ⅴ族化合物(n型GaAs、GaP和InP)较小的少子扩散长度。
A new a-SiC: H/ pin potential well structure visible-light injection-electroluminescent device has been designed. The band gaps of p and n a-SiC: H layer are larger than that of I layer, so the injection carrier can be confined in luminescent active I layer. 本文提出一种新的a-SiC:H/pin势阱结构可见光注入式电致发光器件。
Carrier Trapping Effects in a-Si: H p-i-n Solar Cell Structure ── a Study of Stability in a-Si: H Solar Cells a-Si:Hp-i-n型太阳能电池中的载流子俘获效应&a-Si:H太阳能电池稳定性研究
A graphical analysis method is introduced using which the final multiple SPWM ( MSPWM) waveform can be educed directly from the modulating signal and the n triangular carrier waveforms. 介绍了一种可以直接从调制信号和n个三角载波分析得出SPWM多重化(MSPWM)输出波形的图解分析法。
N Hydroxysuccinimide functional group was introduced into polymer carrier to synthesize a couple of polymer NHS esters. 将NHS(N羟基琥珀酰亚胺)酯功能基团引入高分子载体上,合成了几种聚合物的NHS酯。
Study on stabilities of emulsion liquid membrane with N 263 as carrier N(263)为载体的乳状液膜稳定性的研究
The conduction band offset and the interface charge density are derived from the apparent carrier concentration distribution obtained by the C-V profiling techniqe. 采用C-V法测量Si/GaP(Ⅲ)异质结的表观载流子浓度分布n(x),从中导出了异质界面的导带失配值和界面电荷密度。
The influence of C/ N ratio on the nitrogen removal was investigated in the suspended carrier biological reactor. 文章研究了C/N对悬浮填料生物反应器脱氮效果的影响。
Frequency/ time two dimension N channels acquisition is adopted in PN sequence acquisition, frequency locked loop and phase locked loop are used in carrier recovery, coordinated rotation digital computer is employed in phase computing. 伪码捕获采用时域/频域二维N通道捕获的方案,载波恢复采用FLL和PLL相结合的方法,相位角的计算采用旋转坐标数字计算机的方法;
Study in the suspended carrier and activated sludge integrated A_mO_n process. 悬浮填料活性污泥一体化AmOn工艺研究。
Carrier Concentration Profiles of GaP ∶ N LPE Wafers GaP∶NLPE片的纵向载流子浓度分布
Taking account of carrier lifetime, carrier mobility, carrier diffusion length and its on stage voltage drop, then the optimization design of doping concentration and the width of n base region required in different withstand voltage can be getted. 同时对器件的N基区设计则综合考虑了耐压、载流子寿命、迁移率、载流子的扩散长度和通态压降等,得到了RSD在不同耐压需求下的掺杂浓度和主要阻断区域的优化设计。
Firstly, using the LIBS spectral signal-noise ratio ( S/ N) as optimization criteria, the spectral intensity of the chosen atomic characteristic lines is optimized by using different carrier gas, delay time and optical collection geometry. 首先以光谱信噪比为依据,对比研究了不同背景气体、延迟时间及光路参数等因素对特征谱线强度的影响,确定了信噪比最优的实验条件。
A fast procedure is presented to produce the quantum-interference states forthe collective motion of N trapped ions using a single standing-wave field resonant with the ionic carrier frequency. 提出了一个快速制备N个囚禁离子集体运动的量子相干叠加态方案。方案中使用了单个驻波激光场与离子的载波共振。
In the Experiment, TMGa and nitrogen are used as the sources of Ga and N respectively, and ultra-pure hydrogen is used as a carrier gas. 实验中,以TMGa和氮气分别作为Ga源和N源,以超纯氢气作为载气。
The emulational results show that the effect of the silicon substrates thickness on the output performance of n+ pp+ solar cells depends on the diffusion length of minority carrier in substrates. 仿真结果表明,硅衬底厚度对n+pp+电池输出特性的影响与衬底少子的扩散长度相关。